Improvement of CISSe / CdS / ZnO Structure Performance by SCAPS-1D.

Abstract This manuscript presents an optimization of the performances of the CISSe/CdS/ZnO structure. 12 tests were performed for each layer on thickness, gap energy and temperature using SCAPC-1D. Numerical data were compiled with the open circuit voltage, the short circuit density, the fill factor and the efficiency. The results obtained are confirmed with the measurements illustrated in the literature. The analyses indicate a progressive improvement in the performance of the structure for each test; an efficiency of 28.8 % was recorded for the CISSe layer while 30.07 % as an efficiency for CdS and 31.47 % for the absorbent layer. On the other hand, an open circuit voltage does not exceed 1.37V for the whole structure.Thus, these results are satisfied and encouraged.