Impedance Characterization of AlGaN/GaN/Si High Electron Mobility Transistors

Abstract AlGaN/GaN HEMTs grown on high resistive silicon (111) substrate grown by molecular beam epitaxy have been investigated using impedance measurements. Passivation of the HEMT devices is made in order to improve the electron transport. As has been found from conductance data, the electron traps are eliminated after passivation. The impedance spectroscopy has been, on the other hand, studied from the electrical transport. As a result, a complex impedance plot was revealed an equivalent circuit models indicating single semicircles and the solid interface.