Insight into pressure effect on optoelectronic, mechanical, and lattice vibrational properties of nanostructured GaxIn1 − xPySbzAs1 − y − z for the solar cells system

Abstract The electronic, optical, and elastic characteristics of the Ga x In 1 − x P y Sb z As 1 − y − z alloy lattice matched to the GaSb substrate using a pseudo-potential formalism (EPM) based on the virtual crystal approximation (VCA) are performed. The mechanical features, acoustic velocity, and phonon frequencies of the Ga x In 1 − x P y Sb z As 1 − y − z /GaSb system are calculated. The sensitivity of these properties to pressure is considered. Our findings are reasonably consistent with the experimental evidence that is currently available. The studied properties of this alloy under the influence of pressure are a new achievement. Novel device applications would be made possible by the pentanary Ga x In 1 − x P y Sb z As 1 − y − z alloy under high pressure.